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| HiPerFETTM Power MOSFETs Single Die MOSFET Preliminary data sheet Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS I ISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C IXFN 80N48 D VDSS ID25 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr RDS(on) = 480 V = 80 A = 45 mW G S S Maximum Ratings 480 480 20 30 80 320 80 64 6 5 700 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A mJ J V/ns W C C C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C, Chip capability TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C I S IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C S D G = Gate S = Source D = Drain Either Source terminal of miniBLOC can be used as Main or Kelvin Source Features International standard packages miniBLOC, with Aluminium nitride Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low package inductance Fast intrinsic Rectifier Applications rated isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 480 2 TJ = 25C TJ = 125C 4 200 100 2 45 V V nA mA mA mW VDSS VGH(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2 % DC-DC converters Battery chargers Switched-mode and resonant-mode DC choppers Temperature and lighting controls Advantages power supplies Easy to mount Space savings High power density (c) 2000 IXYS All rights reserved 98724 (05/31/00) IXFN 80N48 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 50 70 9890 VGS = 0 V, VDS = 25 V, f = 1 MHz 1750 460 61 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 W (External), 70 102 27 380 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 80 173 0.18 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Inches Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 miniBLOC, SOT-227 B gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 15 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 80 320 1.3 250 A A V ns mC A I F = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % I F = 50A, -di/dt = 100 A/ms, VR = 100 V 1.2 8 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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